2026-09-18T20:53:44Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/80791 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Feng, Milton Hattendorf, Michael Leonard 2015-09-25T20:08:11Z 2015-09-25T20:08:11Z 10000-01-01 2002 2002 Measurement-based characterization of SHBTs scaled down to 0.35 mum was performed, and detailed understanding of do and RF scaling properties was developed. Important scaling phenomena that emerge as the emitter width is scaled to the deep submicron regime were identified and analyzed. A unique small-signal model extraction procedure was developed and used to study base resistance scaling in submicron HBTs. A measurement-based analysis technique was developed to quantitatively describe the current spreading phenomenon in submicron InP HBTs for the first time. These results suggest that additional device scaling along with improvements in epitaxial materials should lead to further progress in the development of high-speed, low power electronics using InP-based HBTs. Made available in DSpace on 2015-09-25T20:08:11Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3070321.pdf: 4510777 bytes, checksum: aba88562783aa35430375719c2f191fe (MD5) Previous issue date: 2002 Embargo set by: Seth Robbins for item 82073 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 91 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002. http://hdl.handle.net/2142/80791 (MiAaPQ)AAI3070321 eng Engineering, Electronics and Electrical Submicron Scaling in Indium Phosphide/indium Gallium Arsenide Single Heterojunction Bipolar Transistors text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.