2026-09-22T06:23:43Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/80792 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Feng, Milton Huang, JianJang 2015-09-25T20:08:11Z 2015-09-25T20:08:11Z 10000-01-01 2002 2002 To identify the limitation of DC performance of GaN HBTs, the CE IC-VCE modulation curves in AlGaN/GaN graded emitter HBTs at low temperature was studied in order to understand the limiting issues related to the low CE current gain of a GaN HBT. We have measured a CE current gain of 31.0 at 175 K and 11.3 at 295 K. The increase in collector current and CE current gain at lower temperature can be attributed to the reduced base recombination current, which is due to the carrier traps associated with defect (dislocation) centers in the base-emitter junction. Made available in DSpace on 2015-09-25T20:08:11Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3070328.pdf: 3540536 bytes, checksum: dd15acd136e8e5026481137e53f0d3f2 (MD5) Previous issue date: 2002 Embargo set by: Seth Robbins for item 82074 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 81 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002. http://hdl.handle.net/2142/80792 (MiAaPQ)AAI3070328 eng Engineering, Electronics and Electrical Development of Asymmetric Fabry -Perot Modulators and Power HBT Circuits for High-Speed Applications text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.