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oai:www.ideals.illinois.edu:2142/80808 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Chuang, Shun-Lien Choquette, Kent D. Young, Erik William 2015-09-25T20:08:16Z 2015-09-25T20:08:16Z 10000-01-01 2002 2002 The high frequency modulation response for hybrid VCSELs is measured and compared to the theoretical response of the VCSEL derived through small signal analysis, with good agreement. For the two single mode structure wafers measured, the VCSELs with the implant aperture located farther away from the active region had the better response. The capacitance of the high speed structure VCSEL, where a deep (through the active region) and wide implant is used to reduce charge buildup underneath the oxide layers, and hence capacitance, is smaller than the capacitances of the other wafers due to reduction in the oxide capacitance. However, the capacitance of all the VCSEL wafers was increased because of the area of the bottom contact mesa and the photoresist bridge. (Abstract shortened by UMI.). Made available in DSpace on 2015-09-25T20:08:16Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3070487.pdf: 3174785 bytes, checksum: 54d2648a8008b0fa63e7cf440355980c (MD5) Previous issue date: 2002 Embargo set by: Seth Robbins for item 82090 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 101 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002. http://hdl.handle.net/2142/80808 (MiAaPQ)AAI3070487 eng Physics, Optics A Comprehensive Study of Hybrid Vertical -Cavity Surface -Emitting Lasers text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.