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Hsieh, K.C. Chang, Kuo-Lih 2015-09-25T20:08:29Z 2015-09-25T20:08:29Z 10000-01-01 2003 2003 Finally, I developed two methods to transfer a GaAs-based device layer on a transparent GaP substrate (for emission wavelength longer than 560 nm), which involve multiple processing techniques. One approach also includes the regrowth step, which further indicates the bonded sample can further be processed at high temperatures. Made available in DSpace on 2015-09-25T20:08:29Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3111669.pdf: 3085798 bytes, checksum: 93e29902021f01ff36773652440d369a (MD5) Previous issue date: 2003 Embargo set by: Seth Robbins for item 82133 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 75 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003. http://hdl.handle.net/2142/80851 (MiAaPQ)AAI3111669 eng Engineering, Materials Science Wafer Bonding With Low-Temperature Grown Compound Semiconductor Materials for Optoelectronic Device Application text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.