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oai:www.ideals.illinois.edu:2142/80863 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Kim, Kyekyoon Park, Chul-Woo 2015-09-25T20:08:32Z 2015-09-25T20:08:32Z 10000-01-01 2004 2004 A careful physical design, namely, layout, can convert the design into tangible devices without fabrication problems. The horseshoe-shaped gate and the design rule of thumb were proposed in the physical design and two mask sets were fabricated. Keys to the fabrication of GaN BGJFETs may be the device-quality material and the stable fabrication technology as well as the masks. The difficulties and achievements in the growth of n-GaN and p-GaN films by plasma-assisted molecular beam epitaxy (PAMBE) were discussed. The p-GaN films were grown in Ga-rich regime in order to obtain excellent surface morphology as well as high doping concentration. For the fabrication of BGJFETs, two-step etching was adopted to minimize plasma-induced etch damage. Ohmic contact issues for n-GaN and p-GaN were also discussed. Finally, the test results of the preliminary BGJFETs were discussed with the future expectations and recommendations. Made available in DSpace on 2015-09-25T20:08:32Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3131000.pdf: 6549533 bytes, checksum: d031097172ca08eb54039b891bf4f449 (MD5) Previous issue date: 2004 Embargo set by: Seth Robbins for item 82145 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 111 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004. http://hdl.handle.net/2142/80863 (MiAaPQ)AAI3131000 eng Physics, Condensed Matter A Critical Study of Gallium Nitride-Based Digital Technology text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.