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        <identifier>oai:www.ideals.illinois.edu:2142/80882</identifier>
        <datestamp>2023-07-11</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>J. Gary Eden</dc:contributor>
          <dc:creator>Ostrom, Nels Patrick</dc:creator>
          <dc:date>2015-09-25T20:08:38Z</dc:date>
          <dc:date>2015-09-25T20:08:38Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>2004</dc:date>
          <dc:date>2004</dc:date>
          <dc:description>Photodetection in a silicon pyramidal microdischarge device has been observed. This hybrid plasma/semiconductor device was fabricated from standard silicon wafers using common integrated circuit, microfabrication techniques. The response of the devices to a 780-nm laser diode was shown to have an absolute photosensitivity of greater than 3.5 A/W. The absolute spectral response of the active plasma devices closely resembles the response of other silicon devices. The 100 x 100 mum devices exhibited a peak response of &amp;sim;2.0 A/W at 850 nm while the 50 x 50 mum devices showed a response of &amp;sim;3.6 A/W at 900 nm. Frequency response of the device was measured at &gt;500 MHz using a 7--10 ns pulse from a 532-nm Nd:YAG laser. The results of the experiments culminated in the development of an explanation of the photodetection mechanism. The silicon electrode acts as a photocathode and converts incoming photons into electrons, which then undergo a multiplication in the plasma. The electron multiplication, measured during experiments, is greater than 3.</dc:description>
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  Previous issue date: 2004</dc:description>
          <dc:description>Embargo set by: Seth Robbins for item 82164
Lift date: Forever
Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:description>98 p.</dc:description>
          <dc:description>Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.</dc:description>
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          <dc:identifier>(MiAaPQ)AAI3153391</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:subject>Engineering, Electronics and Electrical</dc:subject>
          <dc:title>Photodetection in Silicon Pyramidal Microdischarges</dc:title>
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            <department>Electrical Engineering</department>
            <discipline>Electrical Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
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