2026-09-19T05:50:58Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/80973 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Kyekyoon (Kevin) Kim Hong, Seung Jae 2015-09-25T20:09:03Z 2015-09-25T20:09:03Z 10000-01-01 2006 2006 This thesis work presents a comprehensive study on the development of GaN-based power electronic devices. The hands-on research on GaN compound semiconductors includes thin film growth, material characterization, device fabrication, and device characterization using state-of-the-art semiconductor processing equipment and characterizing tools. High-quality GaN films grown by plasma-assisted molecular beam epitaxy (PAMBE) are used for the fabrication of GaN-based field-effect transistor (FET) devices such as metal semiconductor FET (MESFET) and high electron mobility transistor (HEMT). In order to investigate the GaN-based FETs, theoretical principles, processing conditions, and characterization skills of the ohmic and Schottky metal contacts are discussed. The present work especially focuses on the reduction of power losses in GaN-based FET devices. For the first time, the PAMBE-based selective-area growth (SAG) technique is demonstrated to improve the properties of the ohmic contacts for n-GaN and AlGaN. Employing this technique, high-performance GaN MESFETs and HEMTs are fabricated and characterized. Made available in DSpace on 2015-09-25T20:09:03Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3242872.pdf: 2769639 bytes, checksum: 8dae89d5289349b7e3c8324369f3397e (MD5) Previous issue date: 2006 Embargo set by: Seth Robbins for item 82255 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 118 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006. http://hdl.handle.net/2142/80973 (MiAaPQ)AAI3242872 eng Engineering, Materials Science Development of Gallium Nitride-Based Power Electronic Devices Using Plasma-Assisted Molecular Beam Epitaxy text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.