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oai:www.ideals.illinois.edu:2142/81043 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

John Tucker Robinson, Stephen John 2015-09-25T20:09:22Z 2015-09-25T20:09:22Z 10000-01-01 2007 2007 The research presented herein is based on the fabrication and transport properties of nanometer-scale devices in silicon. The most promising of these structures are nanowires fabricated with a scanning tunneling microscope (STM). These high-density nanowires display the low-temperature phenomena of weak localization and one-dimensional conduction. Long-term applications of such nanowires and derivative devices include alternatives to conventional CMOS transistors and very sensitive charge and/or spin-detection devices. In addition, focused ion beams (FIBs) have been used to directly and precisely implant ions in the hope that they may be used to contact nanodevices, but surface damage may preclude that possibility. Made available in DSpace on 2015-09-25T20:09:22Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3290362.pdf: 4018439 bytes, checksum: 1cda713ab1a24c0ec59c8f8832ed8f35 (MD5) Previous issue date: 2007 Embargo set by: Seth Robbins for item 82325 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 129 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007. http://hdl.handle.net/2142/81043 (MiAaPQ)AAI3290362 eng Physics, Condensed Matter Fabrication and Transport Properties of Silicon Nanoelectronic Devices text Electrical and Computer Engineering Electrical and Computer Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.