2026-09-18T20:40:29Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/81074 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Adesida, Ilesanmi Chen, Guang 2015-09-25T20:09:29Z 2015-09-25T20:09:29Z 10000-01-01 2008 2008 The AlGaN/GaN high electron mobility transistor (HEMT) is a promising candidate for microwave applications due to its high power and low noise characteristics at such frequencies. As a result of improved material growth and processing technologies, microwave power densities have been demonstrated in AlGaN/GaN HEMTs that are five to ten times greater than that of corresponding GaAs-based devices. These higher power densities will result in simplifying the design and fabrication of monolithic microwave integrated circuits (MMICs). Power AlGaN/GaN MMIC design requires large signal modeling of the device. In bottom-up modeling techniques, the large signal model is based on small signal models derived at different bias conditions. In addition, noise performance analyses also require the knowledge of the small signal model in order to extract the intrinsic noise parameters. In this work, a new small signal equivalent circuit model extraction procedure is presented. The device noise model is developed based on this small signal model. Although AlGaN/GaN HEMTs show excellent properties in power and noise applications, they are still not widely adopted in commercial applications due to the reliability issue. The trapping effect is studied in our work by electrical and thermal methods. Made available in DSpace on 2015-09-25T20:09:29Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3314742.pdf: 1120496 bytes, checksum: 73ef14186440b6ab6a14a24eb3ae03ff (MD5) Previous issue date: 2008 Embargo set by: Seth Robbins for item 82356 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 88 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008. http://hdl.handle.net/2142/81074 (MiAaPQ)AAI3314742 eng Engineering, Electronics and Electrical Gallium Nitride-Based HEMT Devices Modeling and Performance Characterization text Electrical and Computer Engineering Electrical and Computer Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.