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oai:www.ideals.illinois.edu:2142/81075 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

J. Gary Eden Chen, Kuo-Feng 2015-09-25T20:09:30Z 2015-09-25T20:09:30Z 10000-01-01 2008 2008 Modeling of these devices entailed solving the differential form of Poisson's equation, subject to particle flux continuity of the cathode. Comparison of the model predictions with experimental estimates of the sheath potential shows agreement between the two to within 5% over the entire range in voltage investigated. This simulation, in tandem with the measured sheath potential, provides a new probeless method to determine the electron density at the sheath edge. Made available in DSpace on 2015-09-25T20:09:30Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3314743.pdf: 2479898 bytes, checksum: 9fb0e09f7684c7c4a756a63337bfcf9c (MD5) Previous issue date: 2008 Embargo set by: Seth Robbins for item 82357 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 104 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008. http://hdl.handle.net/2142/81075 (MiAaPQ)AAI3314743 eng Engineering, Electronics and Electrical Microplasma Transistor With Quasi Metal-Oxide-Semiconductor (mos)/metal-Insulator-Metal (Mim) Electron Emitters text Electrical and Computer Engineering Electrical and Computer Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.