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Aluru, Narayana R. Xu, Yang 2015-09-25T20:09:47Z 2015-09-25T20:09:47Z 10000-01-01 2009 2009 In addition to the multiscale method, we present an ab initio study of electronic properties of graphene flakes and nanoribbons adsorbed on clean and H-passivated (100) silicon surfaces. The graphene electronic properties are not perturbed by the H-passivated Si substrate. In contrast, the interaction between the clean Si surface and graphene can significantly change the bandstructure of graphene. This is caused by the covalent bonding formed by C and surface Si atoms, which changes the pi-band network of the graphene layer. The dispersion curves and density of states calculations show that the bonded Si-C surface states are highly delocalized and located near the Fermi energy. Adsorption energy indicates that the graphene flakes and nanoribbons are stable on clean Si(100) surfaces. Made available in DSpace on 2015-09-25T20:09:47Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3395548.pdf: 5432938 bytes, checksum: 895c606b5ef708b16ba300e06a5872c4 (MD5) Previous issue date: 2009 Embargo set by: Seth Robbins for item 82433 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 109 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009. http://hdl.handle.net/2142/81152 (MiAaPQ)AAI3395548 eng Nanotechnology Electrostatic Analysis of Nanoelectromechanical Systems text Electrical and Computer Engineering Electrical and Computer Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.