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oai:www.ideals.illinois.edu:2142/81156 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

eng Adesida, Ilesanmi Ofuonye, Benedict Chukwuka 2015-09-25T20:09:48Z 2015-09-25T20:09:48Z 2009 2009 The developed ion-implantation process was used to propose fabrication schemes for novel high speed self-aligned and non-self-aligned AlGaN/GaN high electron mobility trasistors (HEMTs) employing Ir/Pt/Au or Ni/Au gate and non-alloyed ohmic contact metallizations. Made available in DSpace on 2015-09-25T20:09:48Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3406791.pdf: 19732405 bytes, checksum: c94ea7689872a390116ea2dfa5be0d6a (MD5) Previous issue date: 2009 Embargo set by: Seth Robbins for item 82437 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Open Restriction set for Item 82437 on 2019-04-22T19:51:36Z with date null by astein@illinois.edu. Open Restriction set for Item 82437 on 2019-04-22T19:51:38Z with date null by astein@illinois.edu. Access restriction removed because this dissertation was also submitted via Vireo. The matching vireo record indicates that the student decided to make it openly available. Change made by astein on 2019-04-22 at 14:52 CDT Open 111 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009. http://hdl.handle.net/2142/81156 (MiAaPQ)AAI3406791 Engineering, Electronics and Electrical Advanced Process Development for Contacts to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors (Hemts) text Electrical and Computer Engineering Electrical and Computer Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.