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oai:www.ideals.illinois.edu:2142/81176 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Chuang, Shun-Lien Fang, Wei-Chiao William 2015-09-25T20:09:55Z 2015-09-25T20:09:55Z 10000-01-01 1997 1997 The effects of temperature and spatial hole burning are investigated in long-wavelength InP-based lasers and integrated optical devices, including Fabry-Perot (FP) lasers, distributed-feedback (DFB) lasers, and integrated electroabsorption modulator with DFB lasers (EML). First, the temperature dependence of bulk InGaAsP semiconductor laser diodes is analyzed using a consistent method involving gain and spontaneous emission measurements to isolate the temperature-sensitive effects. Second, longitudinal spatial hole burning is examined theoretically and experimentally in both Fabry-Perot and index-coupled distributed-feedback lasers. The photon density profiles are calculated and compared with the carrier density profiles extracted from spontaneous emission measurements. The facet reflection coatings have a large impact on the spatial hole burning in laser diodes. Next, a longitudinal model using the transfer-matrix method and coupled-mode theory is developed for integrated devices. The model is applied to the characterization of an integrated electroabsorption modulator with a distributed-feedback laser. It is shown that the adiabatic wavelength chirping of the EML is very sensitive to the optical feedback from the facets. Finally, a four-channel DFB laser array integrated with a semiconductor optical amplifier and electroabsorption modulator is designed and fabricated. Tunable three-electrode curved-waveguide DFB lasers are used to generate the multiple wavelengths. The output power per channel is as high as 2 mW, and the device operates successfully at 2.5 Gbit/s. Made available in DSpace on 2015-09-25T20:09:55Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9737099.pdf: 5211339 bytes, checksum: 606adab7897e80ae7f57b0d758fcc8f2 (MD5) Previous issue date: 1997 Embargo set by: Seth Robbins for item 82457 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 114 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997. http://hdl.handle.net/2142/81176 (MiAaPQ)AAI9737099 eng Physics, Optics Temperature and Spatial Hole Burning Effects in Semiconductor Lasers and Integrated Optical Devices text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.