2026-09-20T11:33:27Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/81181 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

I. Adesida Grundbacher, Ronald Waldo 2015-09-25T20:09:57Z 2015-09-25T20:09:57Z 10000-01-01 1997 1997 The effect of drain-sides cap recess distance on InGaAs/GaAs PHEMT device performance at both dc and rf frequencies is investigated. This investigation is achieved though the development of a four-layer electron beam resist technique and sequential wet and dry selective etching. A high linearity of device characteristics is important to minimize intermodulation of high frequency signals under high-power operation. The linearity of device performance is investigated through the comparison of InGaAs/GaAs PHEMTs and doped channel FETs at dc and rf operation. InP is investigated as a channel material for use in high-power FETs due to the intrinsic properties including high breakdown voltage, high electron saturation velocity, high electron velocity at high electric field, and high thermal conductivity. Forming low-resistance ohmic contacts to modulation-doped InP channel heterostructures is a challenging issue and is investigated through the study of ion-implanted alloyed contacts and through cap layer design for nonalloyed contacts. Made available in DSpace on 2015-09-25T20:09:57Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9737125.pdf: 2890454 bytes, checksum: 61bf15aecb7a74424b8001087a67efb1 (MD5) Previous issue date: 1997 Embargo set by: Seth Robbins for item 82462 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 118 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997. http://hdl.handle.net/2142/81181 (MiAaPQ)AAI9737125 eng Engineering, Electronics and Electrical Modulation-Doped Field-Effect Transistors for High-Power Microwave Applications text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.