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Hsieh, Kuang-Chien Liu, Paul 2015-09-25T20:10:00Z 2015-09-25T20:10:00Z 10000-01-01 1997 1997 To demonstrate the feasibility of using a lattice-mismatched substrate, performance data of yellow LEDs using the step-graded buffer on a GaP substrate are given. These devices have an active region consisting of $\rm In\sb{0.3}Ga\sb{0.7}P$ that is in between an n-type, step-graded buffer and a top p-type contact. Because the GaP substrate is transparent to yellow light, LEDs deposited directly on these substrates can have up to two times greater efficiency than those deposited on absorbing substrates. After annealing, these devices operate at a wavelength of 5940 A at room temperature, but they exhibit lower than expected room temperature external quantum efficiencies. Reasons for these performance characteristics are studied and discussed. Made available in DSpace on 2015-09-25T20:10:00Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9737181.pdf: 3182956 bytes, checksum: 63bdd46814282608c784aacee9b7d433 (MD5) Previous issue date: 1997 Embargo set by: Seth Robbins for item 82473 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 93 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997. http://hdl.handle.net/2142/81192 (MiAaPQ)AAI9737181 eng Engineering, Materials Science Growth and Characterization of Lattice-Mismatched In(x)ga(1-X)p Yellow Light Emitting Diodes on GaP text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.