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        <identifier>oai:www.ideals.illinois.edu:2142/81199</identifier>
        <datestamp>2023-07-11</datestamp>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Feng, Milton</dc:contributor>
          <dc:creator>Barlage, Douglas William</dc:creator>
          <dc:date>2015-09-25T20:10:01Z</dc:date>
          <dc:date>2015-09-25T20:10:01Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>1997</dc:date>
          <dc:date>1997</dc:date>
          <dc:description>State-of-the-art monolithic Ka-band voltage-controlled oscillators were designed, tested and fabricated. Power output was $&gt;$5 dBm and the phase noise was $&lt;$90 dBc/Hz at 100 kHz. The phase noise and output power are also tested vs. the ambient temperature of the oscillator. Another design is presented that exhibits a tuning range of 2 GHz. The initial design procedure is described in detail. Several monolithic varactors are empirically assessed for their contribution to the phase noise. Preliminary results for coplanar resonator structures are presented. These are presented as a means to enhance the frequency stability of the circuit. Design architectures based on the resonator structure are presented. In addition, to improve the tuning range of the state-of-the-art oscillator, several wave-guide lengths were adjusted. These are included as well.</dc:description>
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license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5)
9812526.pdf: 6468582 bytes, checksum: ac477ab852182f8878026f7633ca0fae (MD5)
  Previous issue date: 1997</dc:description>
          <dc:description>Embargo set by: Seth Robbins for item 82480
Lift date: Forever
Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:description>133 p.</dc:description>
          <dc:description>Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.</dc:description>
          <dc:identifier>http://hdl.handle.net/2142/81199</dc:identifier>
          <dc:identifier>(MiAaPQ)AAI9812526</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:subject>Engineering, Electronics and Electrical</dc:subject>
          <dc:title>Modeling of In(0.49)Ga(0.51)P/GaAs Heterojunction Bipolar Transistors for ADC and MMIC Circuit Design</dc:title>
          <dc:type>text</dc:type>
          <degree>
            <department>Electrical Engineering</department>
            <discipline>Electrical Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
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