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Stillman, Gregory E. Thomas, Sunil 2015-09-25T20:10:09Z 2015-09-25T20:10:09Z 10000-01-01 1998 1998 Using the optimized growth conditions for layer growth as well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f$\sb{\rm T}$ and 119 GHz for f$\sb{\rm max}.$ Modifications to the T standard structure in order to improve high-frequency performance have been investigated and will be discussed. Made available in DSpace on 2015-09-25T20:10:09Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9834751.pdf: 3988408 bytes, checksum: d1b3792fcfc0977232b03d2952c73a80 (MD5) Previous issue date: 1998 Embargo set by: Seth Robbins for item 82513 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 87 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998. http://hdl.handle.net/2142/81232 (MiAaPQ)AAI9834751 eng Engineering, Materials Science Growth and Characterization of High-Speed C-Doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.