2026-09-21T08:30:56Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/81239 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Stillman, Gregory E. Curtis, Anthony Paul 2015-09-25T20:10:11Z 2015-09-25T20:10:11Z 10000-01-01 1998 1998 The activation energy of the IRV was extracted from variable temperature TRPL measurements performed on selected samples. The activation energies of the interface recombination velocities agreed with previously established results on unoxidized material interfaces. Made available in DSpace on 2015-09-25T20:10:11Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9904427.pdf: 7327784 bytes, checksum: ccea04d818a06c0387f4584a716b99c0 (MD5) Previous issue date: 1998 Embargo set by: Seth Robbins for item 82520 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 144 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998. http://hdl.handle.net/2142/81239 (MiAaPQ)AAI9904427 eng Engineering, Materials Science Investigation of the Interface Recombination Velocity of Native Oxide/iii-V Semiconductor Interfaces text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.