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Holonyak, Nick, Jr. Evans, Peter Weindel 2015-09-25T20:10:12Z 2015-09-25T20:10:12Z 10000-01-01 1998 1998 In order to overcome the inherent limitations of epitaxial material grown on a single substrate, wafer bonding has been developed over the last decade and is now introduced to the Solid State Devices Laboratory. Resistors are formed by simply bonding two n-type substrates together in order to optimize wafer preparation and bonding parameters. Tunnel junctions are inserted at various distances from the bonding interface to monitor the degree of annealing and disordering that occurs during wafer bonding. The wafer bonding work is the basis for fabricating more sophisticated device structures including light-emitting diodes (LEDs) and VCSELs employing buried tunnel contact junctions. Made available in DSpace on 2015-09-25T20:10:12Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9904450.pdf: 2358573 bytes, checksum: d6de2b335a07ac7895d951676aef61d5 (MD5) Previous issue date: 1998 Embargo set by: Seth Robbins for item 82523 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 53 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998. http://hdl.handle.net/2142/81242 (MiAaPQ)AAI9904450 eng Engineering, Electronics and Electrical Aluminum Gallium Arsenide-Indium Gallium Arsenide Crystal Growth, Buried Tunnel Contact Lasers, Wafer Bonding, and Alluminum Gallium Arsenide Oxide-Based VCSELs text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.