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Holonyak, Nick, Jr. Wierer, Jonathan Joseph, Jr 2015-09-25T20:10:24Z 2015-09-25T20:10:24Z 10000-01-01 1999 1999 Data are presented on AlGaAs-GaAs-InGaAs native-oxide-defined quantum well heterostructures utilizing a tunnel contact junction including edge-emitting lasers, vertical cavity surface emitting lasers, and resonant cavity light emitting diodes. These devices display improved electrical characteristics and provide a means to create thin highly defined cavities in semiconductor light-emitting structures. Made available in DSpace on 2015-09-25T20:10:24Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9921754.pdf: 3181179 bytes, checksum: ac52df9ced8b066174497118b2a81521 (MD5) Previous issue date: 1999 Embargo set by: Seth Robbins for item 82569 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 67 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999. http://hdl.handle.net/2142/81288 (MiAaPQ)AAI9921754 eng Engineering, Materials Science Tunnel Contact Junction Aluminum Gallium Arsenide-Gallium Arsenide-Indium Gallium Arsenide Quantum-Well Heterostructure Lasers and Light Emitters With Native-Oxide-Defined Lateral Currents text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.