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I. Adesida Youtsey, Christopher Thomas 2015-09-25T20:10:24Z 2015-09-25T20:10:24Z 10000-01-01 1999 1999 In this work, the technique of photoelectrochemical wet etching using KOH solutions has been developed for n-type GaN materials. Customized hardware and software have been assembled to carry out the etching. The etching characteristics were characterized over a wide range of process conditions. This work has led to a viable wet etching technology for GaN device fabrication. In addition, the etching technique is useful for material characterization and measuring dislocation densities in n-type GaN thin films. Made available in DSpace on 2015-09-25T20:10:24Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9921759.pdf: 4128398 bytes, checksum: 5f650978fad7c5b84879660820b00d08 (MD5) Previous issue date: 1999 Embargo set by: Seth Robbins for item 82570 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 81 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999. http://hdl.handle.net/2142/81289 (MiAaPQ)AAI9921759 eng Chemistry, Inorganic Photoelectrochemical Wet Etching of Gallium Nitride text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.