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oai:www.ideals.illinois.edu:2142/81313 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Stephen G. Bishop Reuter, Erik Earl 2015-09-25T20:10:30Z 2015-09-25T20:10:30Z 10000-01-01 1999 1999 Photoluminescence was used to measure the bandgap of GaN as a function of temperature in the range 2--811 K, and the results were fitted to Varshni's empirical formula to obtain an expression for the dependence of the energy gap of GaN on temperature which should be generally applicable to most high-quality, unstrained GaN material. Made available in DSpace on 2015-09-25T20:10:30Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9953122.pdf: 3660386 bytes, checksum: ecd5d846766a8dbf9da7375d0e26d19b (MD5) Previous issue date: 1999 Embargo set by: Seth Robbins for item 82594 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 103 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999. http://hdl.handle.net/2142/81313 (MiAaPQ)AAI9953122 eng Physics, Condensed Matter Optical Characterization of Defects and Impurities in Gallium Nitride text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.