2026-09-20T20:50:20Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/81325 2023-07-11 col_2142_5131 col_2142_8888 com_2142_5130 com_2142_8887 com_2142_234

Feng, Milton Shimon, Robert Leon 2015-09-25T20:10:35Z 2015-09-25T20:10:35Z 10000-01-01 2000 2000 This dissertation summarizes the design and performance of a set of MMICs fabricated at the University of Illinois in a 0.12-mum direct ion-implanted GaAs MESFET process. The circuits are suitable for insertion into a 77-GHz automotive radar system. This work develops non-linear, linear and noise models for the MESFET and Schottky diode and synthesizes models for a variety of coplanar passive components. All of the models are verified with comparisons to measured data through W-band. This work then presents measured and simulated performance characteristics of the MMICs. A three-stage amplifier exhibits 8 dB of gain, and each diode and FET-based mixer exhibits less than 15 dB of conversion loss at 77 GHz. These results demonstrate the potential of ion-implanted MESFET technology at millimeter-wave frequencies. Made available in DSpace on 2015-09-25T20:10:35Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9955667.pdf: 5221944 bytes, checksum: ac15aa276546e6c4289468df577fda51 (MD5) Previous issue date: 2000 Embargo set by: Seth Robbins for item 82606 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 126 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000. http://hdl.handle.net/2142/81325 (MiAaPQ)AAI9955667 eng Engineering, Electronics and Electrical Ion -Implanted GaAs MESFET MMICs for 77-Ghz Automotive Radar text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.