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Stillman, Gregory E. Hartmann, Quesnell Jacob 2015-09-25T20:10:36Z 2015-09-25T20:10:36Z 10000-01-01 1998 1998 Although device physics and semiconductor theory were an essential part of this research, few new theoretical calculations or predictions were made. Rather, this thesis relied heavily on the work of those, who early in the history of semiconductors, developed the theories of minority carrier injection, heterojunction effects, bandgap engineering, and carbon-doping. The work described here is mostly an exercise in applying these theories to produce a manufacturable, high-performance transistor capable of meeting the demands of modern electronics. Made available in DSpace on 2015-09-25T20:10:36Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9955690.pdf: 6213074 bytes, checksum: 1e5a1f68ed39b4d9eae3701dab64801b (MD5) Previous issue date: 1998 Embargo set by: Seth Robbins for item 82609 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 107 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998. http://hdl.handle.net/2142/81328 (MiAaPQ)AAI9955690 eng Engineering, Electronics and Electrical Growth and Design of High-Performance InGaP/GaAs Heterojunction Bipolar Transistors Grown by Low -Pressure Metalorganic Chemical Vapor Deposition text Electrical Engineering Electrical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.