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oai:www.ideals.illinois.edu:2142/82354 2023-07-11 col_2142_5131 col_2142_11615 com_2142_5130 com_2142_9130 com_2142_8903

Braatz, Richard D. Seebauer, Edmund G. Gunawan, Rudiyanto 2015-09-25T20:43:16Z 2015-09-25T20:43:16Z 10000-01-01 2003 2003 Reducing the junction depth using rapid thermal annealing with high heating rates comes at a cost of increasing sheet resistance. A model-based optimization is formulated to design the optimal annealing temperature program that gives the minimum junction depth while maintaining satisfactory sheet resistance. Comparison of different parameterizations of the optimal trajectories shows that linear profiles give the best combination of minimizing junction depth and sheet resistance. Worst-case robustness analysis of the optimal control trajectory motivates improvements in feedback control instrumentation and strategies for these processes. Made available in DSpace on 2015-09-25T20:43:16Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3101850.pdf: 4797965 bytes, checksum: fc8bbc713028230b088839dc4740ad9c (MD5) Previous issue date: 2003 Embargo set by: Seth Robbins for item 83635 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 123 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003. http://hdl.handle.net/2142/82354 (MiAaPQ)AAI3101850 eng Engineering, Chemical Modeling and Control of Transient Enhanced Diffusion of Boron in Silicon text Chemical Engineering Chemical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.