2026-09-19T17:01:05Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/82359 2023-07-11 col_2142_5131 col_2142_11615 com_2142_5130 com_2142_9130 com_2142_8903

Kushner, Mark J. Sankaran, Arvind 2015-09-25T20:43:17Z 2015-09-25T20:43:17Z 10000-01-01 2003 2003 Cleaning of residual polymer from trenches following etching and the deposition of a continuous barrier layer are critical processes for integration PS as ILDs. To investigate these issues, a reaction mechanism for plasma stripping of residual fluorocarbon polymer using oxygen-based chemistries has been developed and incorporated into the MCFPM. Stripping was less efficient from PS trenches having large pores and high interconnectivity, as compared to SS. Cu ionized metal physical vapor deposition was also investigated as a surrogate for barrier coating. Thin film deposition was less conformal for PS with large pores and interconnected porous networks. Made available in DSpace on 2015-09-25T20:43:17Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3111635.pdf: 6328428 bytes, checksum: 95a0a4b0a0051bb0ca920f7dbd061b65 (MD5) Previous issue date: 2003 Embargo set by: Seth Robbins for item 83640 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 160 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003. http://hdl.handle.net/2142/82359 (MiAaPQ)AAI3111635 eng Engineering, Electronics and Electrical Surface Reaction Mechanisms for Plasma Processing of Semiconductors text Chemical and Biomolecular Engineering Chemical and Biomolecular Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.