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Alkire, Richard C. Qin, Yan 2015-09-25T20:43:27Z 2015-09-25T20:43:27Z 10000-01-01 2006 2006 Cu nucleation and growth on resistive thin gold and ruthenium films was carried out in a electrochemical cell. A current pulse technique was found to produce a higher nucleation density that served to reduce the terminal effect and to result in more uniform deposit thickness and coalesce more rapid across the entire resistive strip. The best results were obtained with high PEG/C1- and low SPS concentration, and with a current pulse regime of 40 mA/cm2 for 0.1 s and -0.0006 A for 1 s. The current pulse technique could also produce denser nuclei number at the location near the far end of Ru films than the steady galvanostatic deposition. Made available in DSpace on 2015-09-25T20:43:27Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3242968.pdf: 4123370 bytes, checksum: 81619cb5f70aa958d36c5bc3a4f90ebd (MD5) Previous issue date: 2006 Embargo set by: Seth Robbins for item 83666 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 201 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2006. http://hdl.handle.net/2142/82385 (MiAaPQ)AAI3242968 eng Engineering, Chemical Effect of Additives and Substrate Resistance on Shape Evolution During Electrodeposition: Nucleation, Growth and Trench Infill for Copper Interconnects text Chemical and Biomolecular Engineering Chemical and Biomolecular Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.