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oai:www.ideals.illinois.edu:2142/82462 2023-07-11 col_2142_5131 col_2142_11615 com_2142_5130 com_2142_9130 com_2142_8903

text Masel, R.I. Steger, Richard Mero 2015-09-25T20:44:12Z 2015-09-25T20:44:12Z 10000-01-01 1998 1998 A vertical-flow warm walled reactor was constructed to investigate the reactions of oxygen and beta-diketones on copper metal. The etch rate was studied as a function of time, temperature, grain orientation, oxygen partial pressure, beta-diketone, and beta-diketone partial pressure. Studies were performed at total pressures ranging from 10 to 200 Torr and substrate temperatures of 250 to 400°C. Copper disks, 9 mm in diameter, as well as thin evaporated films were used as substrates. The production of the corresponding Cu(II) beta-diketone was confirmed by trapping the products down stream of the reactor and analyzing them using gas chromatography/mass spectroscopy. Etch rates over 1.5 mum/min were achieved at substrate temperature of 350°C using 200 Torr of O 2 and 50 Torr of hexafluoropentanedione. The degree of surface contamination was found to be a functions of the O2/hfacH ratio and temperature. At low O2/hfacH ratios the etching took place cleanly while high O2/hfacH ratios produced a thick oxide film The activation energy for etching at high O2/beta-diketone was found to decrease with decreasing sublimation temperature for the corresponding metal chelate. Finally, the decomposition of hfacH was found to be negligible when using a copper substrate while Ni, 316 SS, and Pt catalyst powder showed significant hfacH decomposition. Made available in DSpace on 2015-09-25T20:44:12Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9912387.pdf: 6987753 bytes, checksum: dc4d4cc46c88b9eb492121f7750059d2 (MD5) Previous issue date: 1998 Embargo set by: Seth Robbins for item 83743 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 161 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998. http://hdl.handle.net/2142/82462 (MiAaPQ)AAI9912387 eng Engineering, Chemical Chemical Vapor Etching of Copper Using Oxygen and Various Beta-Diketones Chemical Engineering Chemical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.