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        <identifier>oai:www.ideals.illinois.edu:2142/82706</identifier>
        <datestamp>2023-07-11</datestamp>
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          <dc:contributor>Greene, Joseph E.</dc:contributor>
          <dc:creator>Park, Se-Yang</dc:creator>
          <dc:date>2015-09-25T20:52:34Z</dc:date>
          <dc:date>2015-09-25T20:52:34Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>2001</dc:date>
          <dc:date>2001</dc:date>
          <dc:description>The key results of this research can be summarized as follows: (1) In Si1-yCy/Si(001), alloys, I find that all C incorporates in substitutional sites at Ts &lt; 580&amp;deg;C with y &amp;le; 0.026. At Ts &amp;ge; 580&amp;deg;C, increasing y and Ts leads to increase in the fraction of dicarbon complexes and the formation of periodic bulk planar structures consisting of ordered Si4C layers which form as a result of C surface segregation. (2) In contrast to Si1-yC y/Si(001), I find that irrespective of y and Ts values, complete substitutional C incorporation in Ge1-yCy/Ge(001) is not possible. A fraction of the total C concentration is always incorporated in nanoclusters. Increasing y and/or Ts leads to an increase in the fraction of C in nanoclusters due to a higher C-C encounter probability at the growth surface. (Abstract shortened by UMI.).</dc:description>
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  Previous issue date: 2001</dc:description>
          <dc:description>Embargo set by: Seth Robbins for item 83987
Lift date: Forever
Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:description>87 p.</dc:description>
          <dc:description>Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001.</dc:description>
          <dc:identifier>http://hdl.handle.net/2142/82706</dc:identifier>
          <dc:identifier>(MiAaPQ)AAI3023166</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:subject>Physics, Condensed Matter</dc:subject>
          <dc:title>Carbon Incorporation Pathways and Lattice Site Distributions in Silicon Carbide/silicon(001) and Germanium Carbide/germanium(001) Alloys Grown by Molecular Beam Epitaxy</dc:title>
          <dc:type>text</dc:type>
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            <discipline>Materials Science and Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
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