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          <dc:contributor>Payne, David A.</dc:contributor>
          <dc:creator>Hemjinda, Sarunya</dc:creator>
          <dc:date>2015-09-25T20:52:34Z</dc:date>
          <dc:date>2015-09-25T20:52:34Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>2001</dc:date>
          <dc:date>2001</dc:date>
          <dc:description>A chemical-solution deposition method was used to integrate thin films of Ta2O5-TiO2 onto silicon substrates. Precursor solutions were successfully prepared using Ta(OEt)5 and Ti(OEt) 4 in ethanol. Solution stability was shown to be influenced by several factors, including, Rw ratio, additions of HCl, and, most importantly, conditions of hydrolysis. Electrical measurements revealed that amorphous films exhibited the most favorable dielectric properties, with low tandelta = 0.005 and K' = 27.</dc:description>
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  Previous issue date: 2001</dc:description>
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Lift date: Forever
Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
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          <dc:subject>Engineering, Materials Science</dc:subject>
          <dc:title>Preparations and Characterizations of Tantalum Pentoxide-Titanium Dioxide: Ceramics and Thin Films</dc:title>
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            <grantor>University of Illinois at Urbana-Champaign</grantor>
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