2026-09-23T04:01:00Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/82710 2023-07-11 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Made available in DSpace on 2015-09-25T20:52:35Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3030441.pdf: 4345292 bytes, checksum: 73b405cc08fda9ba4c40258bb636c0cf (MD5) Previous issue date: 2001 Abelson, John Robert Jin, Hyun-Chul 2015-09-25T20:52:35Z 2015-09-25T20:52:35Z 10000-01-01 2001 2001 We have analyzed the electrical properties of SLS poly-Si films on oxidized Si wafer using the pseudo-MOSFET geometry; the majority carrier mobility is extracted from the transconductance. However, the data are non-ideal due to large contact resistance and current spreading. We discuss the future use of these electrical characterization techniques to analyze the properties of individual grain boundaries in thin film Si bicrystals formed by SLS. Embargo set by: Seth Robbins for item 83991 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 109 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001. http://hdl.handle.net/2142/82710 (MiAaPQ)AAI3030441 eng Engineering, Materials Science Low-Temperature Silicon Thin Films for Large-Area Electronics: Device Fabrication Using Soft Lithography and Laser-Crystallization by Sequential Lateral Solidification text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.