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oai:www.ideals.illinois.edu:2142/82711 2023-07-11 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Greene, Joseph E. Spila, Timothy Paul 2015-09-25T20:52:35Z 2015-09-25T20:52:35Z 10000-01-01 2001 2001 Si0.7Ge0.3(001) layers were grown at Ts = 450°C, where strain-induced roughening is completely quenched, to thicknesses greater than the critical value for misfit dislocation formation (tc ≃ 100 nm) to probe the effect of thetaH on cross-hatch formation. At t slightly larger than tc, surface roughness is dominated by single- and multiple-atomic-height steps associated with the interfacial misfits. The surface steps are preferential H desorption sites, thus the increased total step length results in a decrease in thetaH on terraces which increases RSiGe and allows higher adatom ascending step crossing probabilities which, driven by the inhomogeneous strain fields around the misfit dislocation clusters, contributes to the growth of periodic ridges. Made available in DSpace on 2015-09-25T20:52:35Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3030481.pdf: 3493480 bytes, checksum: b2f29d508f58d8301a4359007498aac5 (MD5) Previous issue date: 2001 Embargo set by: Seth Robbins for item 83992 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 84 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2001. http://hdl.handle.net/2142/82711 (MiAaPQ)AAI3030481 eng Physics, Condensed Matter Reaction Paths for Self-Organized Surface Roughening of Silicon-Germanium Alloys During Hydride Gas-Source Molecular Beam Epitaxy text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.