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oai:www.ideals.illinois.edu:2142/82715 2023-07-11 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Greene, Joseph E. Shin, Chan Soo 2015-09-25T20:52:37Z 2015-09-25T20:52:37Z 10000-01-01 2002 2002 Polycrystalline delta-TaN layers deposited on SiO2 at 350°C with Ei = 20 eV in mixed Ar+15%N2 discharges initially exhibit competitive texture evolution until a single texture dominates at t ≳ 200 nm. The preferred orientation of 500-nm-thick Ei = 20 eV layers can be selectively and continuously varied from predominantly underdense 111 to nearly complete dense 002 by varying ion-to-Ta flux ratio Ji/JTa from 1.3 to ≥7.4. The change in texture is primarily due to an increased steady state atomic N coverage, resulting from collisionally-induced dissociative chemisorption of incident energetic N+2 ions, with increasing Ji/JTa. Made available in DSpace on 2015-09-25T20:52:37Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3044221.pdf: 6306735 bytes, checksum: 661b1a0ef35bf82accc7459cd4921a19 (MD5) Previous issue date: 2002 Embargo set by: Seth Robbins for item 83996 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 147 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002. http://hdl.handle.net/2142/82715 (MiAaPQ)AAI3044221 eng Engineering, Materials Science Phase Composition, Microstructure, and Physical Properties of Poly- and Single-Crystal Tantalum Nitride Layers text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.