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oai:www.ideals.illinois.edu:2142/82732 2023-07-11 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Cahill, D.G. Raviswaran, Arvind 2015-09-25T20:52:43Z 2015-09-25T20:52:43Z 10000-01-01 2002 2002 I have investigated the evolution of islands during the heteroepitaxy of Si on Ge(111). This study involves a systematic investigation of the island nucleation kinetics, morphology and microstructure for various thicknesses and deposition temperatures. The islands formed are predominantly three-dimensional. A large density of islands (>1011 cm-2) is observed during growth at low temperatures (600&deg;C) yield a lower density of islands. The activation energy for the nucleation of these islands is &ap;1.7 eV. The islands deposited at temperatures <550&deg;C are predominantly coherent, while those formed at higher temperatures are incoherent, with a transition size of &ap;18 nm. Made available in DSpace on 2015-09-25T20:52:43Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3070417.pdf: 4138922 bytes, checksum: 5c8340beb00c822fc9bf54713e52d6e1 (MD5) Previous issue date: 2002 Embargo set by: Seth Robbins for item 84013 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 162 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2002. http://hdl.handle.net/2142/82732 (MiAaPQ)AAI3070417 eng Engineering, Materials Science Morphological Evolution During Molecular Beam Epitaxy of Germanium/germanium(001) and Silicon/germanium(111) text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.