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Greene, Joseph E. Foo, Yong-Lim 2015-09-25T20:52:45Z 2015-09-25T20:52:45Z 10000-01-01 2003 2003 At higher growth temperature (725 and 750°C), superlattice structures consisting of alternating Si-rich and C-rich sublayers form spontaneously during the gas-source molecular beam epitaxial growth of Si1-y Cy layers from constant Si2H6 and CH 3SiH3 precursor fluxes. The formation of a self-organized superstructure is due to a complex interaction among competing surface reactions. During growth of the initial Si-rich sublayer, C strongly segregates to the second layer resulting in charge transfer from surface Si atom dangling bonds of to C backbonds. This, in turn, decreases the Si2H6 sticking probability and, hence, the sublayer deposition rate. This continues until a critical C coverage is reached allowing the nucleation and growth of a C-rich sublayer until the excess C is depleted. At this point, the self-organized bilayer process repeats itself. Made available in DSpace on 2015-09-25T20:52:45Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3086062.pdf: 3520309 bytes, checksum: cb5b8c246e2009142e4b9af55f66be86 (MD5) Previous issue date: 2003 Embargo set by: Seth Robbins for item 84018 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 81 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003. http://hdl.handle.net/2142/82737 (MiAaPQ)AAI3086062 eng Engineering, Materials Science Silicon Carbon(001) Gas-Source Molecular Beam Epitaxy From Methyl Silane and Silicon Hydride: The Effects of Carbon Incorporation and Surface Segregation on Growth Kinetics text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.