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oai:www.ideals.illinois.edu:2142/82740 2023-07-11 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Greene, Joseph E. Bratland, Kenneth Arnold, Jr 2015-09-25T20:52:46Z 2015-09-25T20:52:46Z 10000-01-01 2003 2003 Fully-strained Ge1-xSnx layers were grown on Ge(001) to probe the role of incorporated Sn concentrations (C Sn = 1 x 1018 cm-3 to 6.1 at%) on surface roughening pathways leading to EB during LT-MBE (155°C) of compressively strained films. Sn mediates surface morphological evolution through two competing pathways. With x ≲ 0.02, the dominant effect is a Sn-induced smoothening of the surface. At higher x there is a change in Ge1-xSn x(001) growth kinetics due to a rapid increase in compressive strain. This leads to a reduction in h1 with increasing x as strain-induced roughening overcomes the smoothening effects and increases in the roughening rate. I show that by varying C Sn I can controllably manipulate the roughening pathway, and hence h1, over a very wide range. Made available in DSpace on 2015-09-25T20:52:46Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3101802.pdf: 4832616 bytes, checksum: 6edad8f532f1a20c0d3b438a21194576 (MD5) Previous issue date: 2003 Embargo set by: Seth Robbins for item 84021 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 112 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2003. http://hdl.handle.net/2142/82740 (MiAaPQ)AAI3101802 eng Physics, Condensed Matter Mechanisms and Reaction Paths for Surface Roughening and Epitaxial Breakdown During Molecular Beam Epitaxy: Fundamental Limits text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.