2026-09-20T06:55:01Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/82764 2023-07-11 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Payne, David A. Ong, Ryan Jason 2015-09-25T20:52:55Z 2015-09-25T20:52:55Z 10000-01-01 2005 2005 A series-capacitor model accounted for the observed dilution in room-temperature K from >900 to ∼600 as film thickness decreased, but could not account for the absence of the expected dielectric anomaly at high temperatures. Instead, a stress-induced distributed phase transformation related to the polycrystalline nature of the film was proposed to account for the observed behavior. Residual stress reduced the spontaneous polarization values in these specimens to 32muC/cm 2 from the predicted stress-free value of 50muC/cm2. An increase in coercive field was attributed to interfacial capacitance and residual stress, whereas a decrease of 30MPa tensile stress resulted in an increase of d33 from 33 to 65pm/V, irrespective of changes in film thickness. These results isolated, for the first time, the effects of stress and thickness on the dielectric, ferroelectric and piezoelectric properties of PZT films without convolution from the other major variables. The research provides a guideline for the tailoring of properties by modifying mechanical stress in polarizable and deformable thin films. Made available in DSpace on 2015-09-25T20:52:55Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3182340.pdf: 9835538 bytes, checksum: acfe9f68024062f2952c0a9a01a794e1 (MD5) Previous issue date: 2005 Embargo set by: Seth Robbins for item 84045 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 162 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005. http://hdl.handle.net/2142/82764 (MiAaPQ)AAI3182340 eng Engineering, Materials Science Processing Effects for Integrated PZT: Residual Stress, Thickness, and Dielectric Properties text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.