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Greene, Joseph E. Cho, Benjamin 2015-09-25T20:53:04Z 2015-09-25T20:53:04Z 10000-01-01 2007 2007 I build upon these results to understand the effect of growth rate and P predeposition on Ge/Si(001) island geometry, density, and spatial distributions. Ge quantum dots are deposited on three types of starting surfaces: (1) Si(001) buffer layers which serve as a reference, (2) Si(001) layers with predeposited P coverages thetaP ranging from 0 to 1 ML, and (3) P-doped Si(001) with CP = 3.4x1018-8.3x10 18 cm-3, which corresponds to thetaP = 0.5-0.8 ML. Predeposited P passivates and roughens the Si(001) surface, which inhibits surface diffusion and causes an increase in Ge island density and pyramid-to-dome ratio, accompanied by enhanced island self-organization along directions. Made available in DSpace on 2015-09-25T20:53:04Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3269859.pdf: 3418937 bytes, checksum: a3c9091ff409d6f6561c57e31aba7bae (MD5) Previous issue date: 2007 Embargo set by: Seth Robbins for item 84081 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 106 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007. http://hdl.handle.net/2142/82800 (MiAaPQ)AAI3269859 eng Engineering, Materials Science Phosphorus Incorporation During Silicon(001):phosphorus Gas-Source Molecular Beam Epitaxy: Effects on Film Growth Kinetics, Surface Morphology, and the Self-Organization of Germanium Quantum Dot Overlays text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.