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oai:www.ideals.illinois.edu:2142/82821 2023-07-11 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Adesida, Ilesanmi Wang, Liang 2015-09-25T20:53:10Z 2015-09-25T20:53:10Z 10000-01-01 2008 2008 "Major findings of this work include: (1) Elucidated the interfacial reactions between Al, Ti, AlTi alloy, and Ti/Al/Mo/Au on GaN. (2) Explained the electrical performance of Ti/Al/Mo/Au on AlGaN/GaN based on microstructural investigations. Proposed a ""spike"" mechanism. (3) Identified the role of other metals, i.e. V, Mo, and Ta, as the first layer for X/Al/Mo/Au contacts. (4) Correlated the surface roughness, lateral encroachment, and contact performance of the Ti/Al/X/Au (X=Ni, Pt, Ir, Mo, Ti and NM) contacts for AlGaN/GaN HEMTs. (5) Tailored the interfacial reaction pathways and electrical performance of Ti/Al/Mo/Au on AlGaN/GaN by incorporating Si into the metallization. Obtained low-resistance contact schemes having wide processing window. (6) Investigated the electrical performance and microstructure of the Ti/Al/Mo/Au contacts on all-binary AlN/GaN HEMTs. Optimized the Ti/Al/Mo/Au contacts on n+-GaN capped AlGaN/AlN/GaN by combined surface treatment and solid state interfacial reaction. (7) Evidenced ultra-shallow Si plasma implantation and dry etch effects of SiCl4 pre-metallization treatment. Demonstrated the best performance by side-way direct contact of the metal with the 2DEG channel. (8) Characterized the carrier transport mechanism by variable temperature measurement between 100 and 375 K." Made available in DSpace on 2015-09-25T20:53:10Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3314931.pdf: 5905593 bytes, checksum: 25fd728551498a737824b4dda0c0db3f (MD5) Previous issue date: 2008 Embargo set by: Seth Robbins for item 84102 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 291 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008. http://hdl.handle.net/2142/82821 (MiAaPQ)AAI3314931 eng Engineering, Materials Science Ohmic Metallizations to Aluminum Gallium Nitride/gallium Nitride High Electron Mobility Transistors: Electrical and Microstructural Studies text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.