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Abelson, John R. Lazarz, Teresa S. 2015-09-25T20:53:21Z 2015-09-25T20:53:21Z 10000-01-01 2009 2009 Manganese nitride films were grown by chemical vapor deposition from the volatile manganese(II) amido precursor bis[di(tert)-butyl)amido]manganese(II)and ammonia. Between 80 and 200°C, the films grown from bis[di(tert )-butyl)amido]manganese(II)contain crystalline eta-Mn3N 2. At 300°C, a mixture of eta- and xi-phase manganese nitride with a manganese carbide impurity is deposited. Oxygen and carbon contamination in the bulk of the films is less than 1 atomic percent. Remarkably, the films are nearly completely crystalline at growth temperatures of 200°C and above. The growth rate of 5.9 nm/min at 200°C is also remarkably high for such a low growth temperature. The crystallinity and rapid growth rates are attributed to the labile metal-ligand bonding characteristic of high-spin MnII. As a result, reactive surface species remain mobile on the surface throughout much of the reaction pathway leading to nitride growth, and can settle into low-energy ordered arrangements before they become incorporated into the bulk by subsequent deposition activity. Made available in DSpace on 2015-09-25T20:53:21Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3392113.pdf: 3792696 bytes, checksum: f282cdc46062af925615dacc51c9e14f (MD5) Previous issue date: 2009 Embargo set by: Seth Robbins for item 84140 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 78 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2009. http://hdl.handle.net/2142/82859 (MiAaPQ)AAI3392113 eng Physics, Condensed Matter Low-Temperature Chemical Vapor Depostion of Ruthenium and Manganese Nitride Thin Films text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.