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        <identifier>oai:www.ideals.illinois.edu:2142/82885</identifier>
        <datestamp>2023-07-11</datestamp>
        <setSpec>col_2142_5131</setSpec>
        <setSpec>col_2142_13836</setSpec>
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        <thesis xmlns="http://www.ndltd.org/standards/metadata/etdms/1.1/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns:dc="http://purl.org/dc/elements/1.1/" xsi:schemaLocation="http://www.ndltd.org/standards/metadata/etdms/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdms11.xsd http://purl.org/dc/elements/1.1/ http://www.ndltd.org/standards/metadata/etdms/1.1/etdmsdc.xsd">
          <dc:contributor>Mazumder, Jyotirmoy</dc:contributor>
          <dc:creator>Egland, Keith Maynard</dc:creator>
          <dc:date>2015-09-25T20:53:29Z</dc:date>
          <dc:date>2015-09-25T20:53:29Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>1997</dc:date>
          <dc:date>1997</dc:date>
          <dc:description>The deposition apparent activation energy was calculated as 122 $\pm$ 9 kJ/mole using growth rates measured by film height and 117 $\pm$ 23 kJ/mole using growth rates measured by LIF signals. This puts the process in the surface kinetic growth regime over the temperature range 1370-1610 K. Above N$\sb2$ and H$\sb2$ levels of 1.25% and below TiCl$\sb4$ input of 4.5%, the growth rate has a half-order dependence on nitrogen and a linear dependence on hydrogen and is approximated by$$\rm r = {{kP\sb{TiCl\sb4}P\sb{H\sb2}P\sbsp{N\sb2}{1/2}exp\left({{-}E\sb{a}\over {RT}\right)}\over{1 + P\sb{Ar}}}}.$$Since nitrogen positively affects growth rate (when added to a TiCl$\sb4$+H$\sb2$ mixture), stepwise reduction of TiCl$\sb4$ to Ti by hydrogen does not occur. $\rm NH\sb{x}$ complexes are clearly involved in the growth mechanism; a likely combination of rate determining steps is the formation of NH and the initial reduction of TiCl$\sb4$ by hydrogen.</dc:description>
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license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5)
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  Previous issue date: 1997</dc:description>
          <dc:description>Embargo set by: Seth Robbins for item 84166
Lift date: Forever
Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:description>138 p.</dc:description>
          <dc:description>Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1997.</dc:description>
          <dc:identifier>http://hdl.handle.net/2142/82885</dc:identifier>
          <dc:identifier>(MiAaPQ)AAI9812578</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:subject>Engineering, Materials Science</dc:subject>
          <dc:title>Kinetic and Microstructural Study of Titanium Nitride Deposited by Laser Chemical Vapor Deposition</dc:title>
          <dc:type>text</dc:type>
          <degree>
            <department>Materials Science and Engineering</department>
            <discipline>Materials Science and Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
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