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Morkoc, Hadis Kim, Wook 2015-09-25T20:53:34Z 2015-09-25T20:53:34Z 10000-01-01 1998 1998 For the growth of n-type films, a specific ammonia flow rate (or V/III ratio if Ga flux is fixed) was required to obtain films with high electron Hall mobility. X-ray diffraction (XRD), photoluminescence (PL), cross-sectional transmission microscopy (XTEM) and deep level transient spectroscopy (DLTS) results also show consistency with electrical results. For the growth of Mg-doped GaN films, larger ammonia flow rates produced electrically better films. This phenomenon has been accounted for by using a simple Ga vacancy model. Also by carrying out secondary ion mass spectroscopy (SIMS) study for the Mg-doped films, the behavior of Mg and H affected by the ammonia flow rate during the film growth was experimentally investigated for the first time. Made available in DSpace on 2015-09-25T20:53:34Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9904508.pdf: 6625971 bytes, checksum: 515eaf67119a5e613860eb043380ef3a (MD5) Previous issue date: 1998 Embargo set by: Seth Robbins for item 84187 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 171 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998. http://hdl.handle.net/2142/82906 (MiAaPQ)AAI9904508 eng Engineering, Materials Science Growth of Wurtzite Gallium Nitride Epitaxial Films on Sapphire Substrate by Reactive Molecular Beam Epitaxy and Material Characterization text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.