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Greene, J.E. Kim, Hyungjun 2015-09-25T20:53:35Z 2015-09-25T20:53:35Z 10000-01-01 1998 1998 Based on all the above results, the growth kinetics of B doped Si 1-xGex(001) GS-MBE were modeled. Film deposition rates RSiGe decrease by ≈50% with increasing CB ≥ 5 x 1019 cm-3 at Ts = 500°C. The TPD results were used to determine the B segregation enthalpy, -0.4 eV, significantly lower than the value for Si(001):B, -0.53 eV. Made available in DSpace on 2015-09-25T20:53:35Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9912289.pdf: 5712219 bytes, checksum: 2cacea131ecfb1dfaaf85918c218a14b (MD5) Previous issue date: 1998 Embargo set by: Seth Robbins for item 84193 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 158 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1998. http://hdl.handle.net/2142/82912 (MiAaPQ)AAI9912289 eng Physics, Condensed Matter H-Mediated Film Growth and Dopant Incorporation Kinetics During Silicon Germanium(001):boron Gas-Source Molecular Beam Epitaxy text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.