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oai:www.ideals.illinois.edu:2142/82923 2023-07-11 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Greene, Joseph E. Glass, Glenn Aaron 2015-09-25T20:53:39Z 2015-09-25T20:53:39Z 1999 1999 CB in Si1-xGex(001) increases with precursor flux ratio and B is incorporated into active sites at concentrations to C*B (Ts) = 2.5 x 1020 and 4.6 x 1020 cm-3 for x = 0 and 0.18 at Ts = 600 and 500°C, respectively. At higher B concentrations, there is a large decrease in the activated fraction of incorporated B. The total acceptor concentration continues to increase. No B precipitates or misfit dislocations were detected by HR-XRD or TEM. The out-of-plane lattice constant a⊥ decreases linearly with increasing C*B and non-linearly, for CB > C*B . Electrical properties are in good agreement with theoretical values to C*B . When thetaB > thetaB,sat, B accumulates in the upper layer, and a parallel incorporation channel becomes available in which B is incorporated as B-pairs which are electrically inactive. Made available in DSpace on 2015-09-25T20:53:39Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9953025.pdf: 7545289 bytes, checksum: e668184c35a12193a0001079f3d88a9c (MD5) Previous issue date: 1999 Embargo set by: Seth Robbins for item 84204 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Open Restriction set for Item 84204 on 2019-01-23T15:22:12Z with date null by fschaef2@illinois.edu. Open Restriction set for Item 84204 on 2019-01-23T15:22:15Z with date null by fschaef2@illinois.edu. Open 165 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1999. http://hdl.handle.net/2142/82923 (MiAaPQ)AAI9953025 eng Engineering, Electronics and Electrical Ultra-High B Doping During Si(1-X)ge(x)(001) Gas-Source Molecular-Beam Epitaxy: A Mechanistic Study of Layer Growth Kinetics, Dopant Incorporation, Electrical Activation, and Carrier Transport text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.