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oai:www.ideals.illinois.edu:2142/82930 2023-07-11 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Chen, Haydn Lin, Chun-Hsiung 2015-09-25T20:53:40Z 2015-09-25T20:53:40Z 10000-01-01 2000 2000 (3) Using the experience accumulated from growing PZT thin films, we expanded the work to grow relaxor ferroelectric thin films. Solid solutions of Pb(Sc1/2Ta1/2)1-xTixO 3 (x = 0--0.3) (PSTT) were grown. Phase evolution of the PSTT thin films with respect to the growth conditions, including growth temperature, processing of the bottom electrode and the individual source flow rates, is discussed. The diffuse phase transition of the relaxor ferroelectric thin film was characterized by its dielectric dispersion. Moreover, effect of an AC field on the dielectric relaxation behavior of the relaxor PSTT thin films was studied. The results were qualitatively explained by the current theories of relaxor ferroelectrics. Pyroelectric properties of the PSTT thin films were also demonstrated. Made available in DSpace on 2015-09-25T20:53:40Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9971121.pdf: 5702563 bytes, checksum: 04135f843e79cc612a103ac53a0c4f11 (MD5) Previous issue date: 2000 Embargo set by: Seth Robbins for item 84211 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 148 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000. http://hdl.handle.net/2142/82930 (MiAaPQ)AAI9971121 eng Engineering, Materials Science Microstructure and Electrical Properties of Mocvd-Derived Perovskite Lead Zirconium(x) Titanium(1-X) Oxygen(3) and Lead (Scandium Tantalum)(1-X) Titanium(x) Oxygen(3) Thin Films on Lanthanum Nickel Oxide Electrode-Buffered Silicon text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.