2026-09-20T22:41:03Z https://www.ideals.illinois.edu/oai-pmh

oai:www.ideals.illinois.edu:2142/82932 2023-07-11 col_2142_5131 col_2142_13836 com_2142_5130 com_2142_13835 com_2142_234

Greene, Joseph E. Taylor, Nerissa Sue 2015-09-25T20:53:41Z 2015-09-25T20:53:41Z 10000-01-01 2000 2000 Ge surface segregation occurs during Si1--xGex(011) GS-MBE. Ge surface coverages thetaGe increase with x, ranging from 0.27 to 0.74 ML for x = 0.04--0.20. At a given film composition, theta Ge decreases with decreasing Ts due to the corresponding increase in the fraction of H-bonded Si surface atoms, fSi,H. From these data, we find that the Ge segregation enthalpy DeltaHs for Si1--xGex(011) varies from --0.18 eV at Ts = 750&deg;C (fSi,H < 0.003) to --0.09 eV at Ts = 475&deg;C (fSi,H = 0.22). Made available in DSpace on 2015-09-25T20:53:41Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 9971202.pdf: 4625352 bytes, checksum: e74cf3ed0350f0769bda448ab15903d3 (MD5) Previous issue date: 2000 Embargo set by: Seth Robbins for item 84213 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 119 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2000. http://hdl.handle.net/2142/82932 (MiAaPQ)AAI9971202 eng Engineering, Materials Science Silicon (011) and Silicon Germanium (011) Gas-Source Molecular Beam Epitaxy: Surface Reconstructions, Growth Kinetics, and Germanium Segregation text Materials Science and Engineering Materials Science and Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.