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Johnson, Harley T. Freund, Jonathan B. Kalyanasundaram, Nagarajan 2015-09-25T21:12:35Z 2015-09-25T21:12:35Z 10000-01-01 2007 2007 In the second part of the work, a new multiscale computational method to study surface evolution is developed. In the new method, called crater function method, an average response of the silicon surface to a single argon impact is computed using molecular dynamics simulations at 500eV beam energies. These average responses (called crater functions) show the presence of ion-stimulated mass rearrangement at the surface in addition to mass removal by sputtering. These crater functions are incorporated into a continuum transport model to study the long-time surface evolution of micrometer-sized targets. These explain experimentally observed surface evolution and long-time amplitude saturation better than existing theoretical models. Made available in DSpace on 2015-09-25T21:12:35Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3290266.pdf: 2688588 bytes, checksum: 7400da693b92625be91aa8ca767955c3 (MD5) Previous issue date: 2007 Embargo set by: Seth Robbins for item 85167 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 106 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007. http://hdl.handle.net/2142/83886 (MiAaPQ)AAI3290266 eng Engineering, Materials Science Structure, Stress and Surface Evolution in Silicon Due to Ion Bombardment text Mechanical Engineering Mechanical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.