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oai:www.ideals.illinois.edu:2142/83894 2023-07-11 col_2142_5131 col_2142_14787 com_2142_5130 com_2142_9630 com_2142_234

Johnson, Harley T. You, Jeong Ho 2015-09-25T21:12:38Z 2015-09-25T21:12:38Z 10000-01-01 2007 2007 The Schrodinger equation, in a real space k·p Hamiltonian formation, is solved using the finite element method to study effects of edge and screw dislocations on optical properties in GaN. Energy levels and corresponding wave functions are obtained for the conduction and valence bands, and spontaneous emission spectra are evaluated to compare with available experimental results. Inhomogeneous band edge shifts for each subband due to the strain fields associated with each type of dislocation, plus the electrostatic potential of edge dislocations, generate spatial separation between electrons and holes resulting in optical emission reduction. Both calculated and experimental data show emission intensity reduction as dislocation density increases. Dislocation effects in GaAs are then investigated and compared with GaN. It is shown that GaAs is more sensitive to dislocations due to a comparatively light effective mass and large deformation fields of the dislocations. Made available in DSpace on 2015-09-25T21:12:38Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3290447.pdf: 3695013 bytes, checksum: 8e8f5d8c05c4b7b856c8abe9016cd523 (MD5) Previous issue date: 2007 Embargo set by: Seth Robbins for item 85175 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 148 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2007. http://hdl.handle.net/2142/83894 (MiAaPQ)AAI3290447 eng Engineering, Materials Science Effect of Nanoscale Defects on Electrical and Optical Properties in Iii-V Semiconductors text Mechanical Engineering Mechanical Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.