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        <identifier>oai:www.ideals.illinois.edu:2142/83908</identifier>
        <datestamp>2023-07-11</datestamp>
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          <dc:contributor>Aluru, Narayana R.</dc:contributor>
          <dc:creator>Tang, Zhi</dc:creator>
          <dc:date>2015-09-25T21:12:41Z</dc:date>
          <dc:date>2015-09-25T21:12:41Z</dc:date>
          <dc:date>10000-01-01</dc:date>
          <dc:date>2008</dc:date>
          <dc:date>2008</dc:date>
          <dc:description>Next, we extend the quasicontinuum (QC) approach for multiscale analysis of silicon nanostructures at finite temperature. Three models, namely the real space quasiharmonic (QHM) model, the local quasiharmonic (LQHM) model, and the reciprocal space quasiharmonic (QHMK) model are investigated. Within this framework, we compute the effect of the temperature and strain on mechanical properties of silicon. We also compute the mechanical response of silicon nanostructures for various external loads. Furthermore, a more efficient multiscale model is presented for mechanical analysis of nanostructures at finite temperature, by combining the QHMK and LQHM models. Finally, we investigate thermodynamic and mechanical properties of silicon nanostructures at finite temperature by using a QHMG approach - where the quasiharmonic approximation is combined with the local phonon density of states (LPDOS). The LPDOS is efficiently calculated from the phonon Green's function by using a recursion technique. Considering different surfaces of a silicon nanowire, we calculate the local thermodynamic properties at finite temperature and observe that the surface effects on the local thermal and mechanical properties are localized to within one or two atomic layers of the nanowire.</dc:description>
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  Previous issue date: 2008</dc:description>
          <dc:description>Embargo set by: Seth Robbins for item 85189
Lift date: Forever
Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs</dc:description>
          <dc:description>U of I Only</dc:description>
          <dc:description>132 p.</dc:description>
          <dc:description>Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2008.</dc:description>
          <dc:identifier>http://hdl.handle.net/2142/83908</dc:identifier>
          <dc:identifier>(MiAaPQ)AAI3314913</dc:identifier>
          <dc:language>eng</dc:language>
          <dc:subject>Physics, Atomic</dc:subject>
          <dc:title>Computational Analysis of Silicon Nanoelectromechanical Systems</dc:title>
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            <department>Mechanical Engineering</department>
            <discipline>Mechanical Engineering</discipline>
            <grantor>University of Illinois at Urbana-Champaign</grantor>
            <level>Dissertation</level>
            <name>Ph.D.</name>
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