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Ruzic, David N. Li, Ning 2015-09-28T14:51:01Z 2015-09-28T14:51:01Z 10000-01-01 2004 2004 A zero-order semi-empirical model is established allowing the attachment of physical understanding and CEPVD experimental phenomena. The model stems from the knowledge of reactive sputtering and PECVD processes as well as the acquired CEPVD experiment results. It correlates the processing parameters with the target and film surface coverage by Ta, TaN and organic sites, from which one can predict the operation mode, either metallic or poison, and the film elemental composition. The organic by-products accounting for the detection of carbon on the substrate by AES analysis and poisoning of the target during the processing are categorized into non-volatile product (OR1) and volatile product (OR2) in a lump-sum assumption. Electron impact, H reducing and ion bombardment are considered as the enhancing mechanisms between the physical and chemical components and included as the reactants of the chemical reactions. Simulation results compare favorably with the experimental data. Made available in DSpace on 2015-09-28T14:51:01Z (GMT). No. of bitstreams: 2 license.txt: 4848 bytes, checksum: 96035ab3f5e1c23cc7138a224ce498bd (MD5) 3160915.pdf: 10164277 bytes, checksum: 4fadf13ebef65542fbc42734129b2f96 (MD5) Previous issue date: 2004 Embargo set by: Seth Robbins for item 87183 Lift date: Forever Reason: Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs Restricted to the U of I community idenfinitely during batch ingest of legacy ETDs U of I Only 215 p. Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004. http://hdl.handle.net/2142/85902 (MiAaPQ)AAI3160915 eng Physics, Condensed Matter Chemically Enhanced Physical Vapor Deposition (Cepvd) of Tantalum Nitride-Based Films for Diffusion Barrier Layers Used in ULSI Devices text Nuclear Engineering Nuclear Engineering University of Illinois at Urbana-Champaign Dissertation Ph.D.